High Precision Lapping and Polishing Equipments
Our advanced LP series polishing pads are engineered for high-performance polishing process in semiconductor manufacturing. These pads provide exceptional polishing efficiency, extended pad life, and low defectivity for a wide range of materials including Silicon, GaAs, InP, GaN, Sapphire, Ceramic, SiC, LiNO3, copper, ILD, STI,etc.
Optimized groove patterns for superior material removal rates
Durable polymer formulation for longer pad life and reduced cost
Precision engineered surface minimizes scratches and defects
Uniform pad properties for stable process results
| Type | Material | Density(g/cm3) | Hardness | COMPRESSIBILITY | Applications |
|---|---|---|---|---|---|
| LP-EP1 | Expanded polyurethane | 0.7 | 95-97 Shore A | 7~8% | Sapphire,Silicon,CMP Titanium |
| LP-EP2 | Expanded polyurethane | 0.6 | 86-88 Shore A | 9~10% | Precision optics,Silicon,semiconductor substrate etc. |
| LP-EP3 | Expanded polyurethane | 0.78 | 95-97 Shore A | 7~9% | Glass,Crystal, Precision optics,Silicon,semiconductor substrate etc. |
| LP-Chemtex | Poromeric | 0.48 | 54 Shore A | 6-24% | GaAs,InP,LiNO3,Silicon,lithium tantalate, nickel, polysilicon,tungsten, zerodur |
| LP-S800 | Felt | 0.47 | 82 Asker C | 3~4% | Sapphire, silicon carbide, gallium nitride, silicon nitride, silicon |
| LP-C1000 | polyurethane | 0.8 | 52~62 Shore D | 0.5~4% | Sapphire, silicon carbide, gallium nitride, silicon nitride, silicon, copper, ILD, STI. |
For III-V materials,InP and GaAs wafers and chips precision polishing.
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Differents pad and cloth for polishing different materials and process.
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