High Precision Lapping and Polishing Equipments
Lapple PF series are high-purity colloidal silica slurries in a specially formulated alkaline dispersion. This unique slurry also contains proprietary non-drying technology that is proven to reduce problems associated with colloidal silica drying, caking, or crystallizing on exposed surfaces. The small particle size of the PF series is designed for the critical polishing of precision Opto-Electronic materials such as Silicon, Gallium Arsenide, Indium Phosphide, Germanium, and other IR materials. The combination of the small colloidal silica particles with the proprietary chemistry technology produces exceptionally low surface finishes in both pad and pitch processes.
Logitech SiO2 slurry is Alkaline colloidal silica. Suitable for polishing silicon wafers and a wide range of optical / electro-optical components.particle size from 15nm to 150nm and solids% is from 15%~40%.PH range from 9~11.5.
Lapple Diamond Suspensions are high-performance, water-based formulations featuring exclusively polycrystalline diamonds. This unique composition delivers exceptional advantages for precision preparation.
Superior Results: Achieve the highest quality surface finish with significantly finer results.
Enhanced Efficiency: Deliver faster material removal rates for increased productivity.
Unmatched Consistency: Maintain stable performance and retain cutting properties consistently throughout the entire preparation process.
Reliable Operation: Offer excellent material removal capability while resisting settling and clogging of dosing systems.
Offers an exceptional balance between high material removal rate (MRR) and the ability to achieve ultra-smooth, defect-free surface finishes critical for advanced nodes.
Engineered chemistry minimizes surface and sub-surface damage (like scratches, dislocations, or roughness), preserving wafer integrity and device performance.
Maintains consistent particle dispersion stability (zeta potential) throughout the polishing process, preventing aggregation and minimizing defectivity for higher yields.
Provides an optimal balance of high performance, extended slurry life, and reduced dilution requirements, leading to lower overall cost of ownership (CoO)。
| Particle | Pack Size | Particle Average | Solid% | PH(20℃) | Applications |
|---|---|---|---|---|---|
| SiO2 | 5KG,25KG | 30-50nm,50-80nm | 15+/-1 | 10.5~11.5 | Silicon,Sapphire,Ceramic,GaAs,InP,MCT,CZT,LiNO3.... |
| SiO2 | 5KG,25KG | 80-120nm | 20+/-1 | 10.5~11.5 | Silicon,Sapphire,Ceramic,GaAs,InP,MCT,CZT,LiNO3.... |
| SiO2 | 5KG,25KG | 50-80nm,80-120nm,110-150nm | 30+/-1 | 10.5~11.5 | Silicon,Sapphire,Ceramic,GaAs,InP,MCT,CZT,LiNO3.... |
| SiO2 | 5KG,25KG | 50-80nm,80-120nm | 40+/-1 | 10.5~11.5 | Silicon,Sapphire,Ceramic,GaAs,InP,MCT,CZT,LiNO3.... |
| Diamond | 500ml | 0.1um,1um,3um,9um,20um | 15+/-1 | 10.5~11.5 | Silicon,Sapphire,Ceramic,GaAs,InP,MCT,CZT,LiNO3.... |
| Nano Diamond | 5KG/25KG | 70~90nm | 5~10 | 3~4 | SiC,Diamond wafer polishing.... |
| CMP Slurry | 5L/25L | NA | NA | NA | Copper,W,SiO2,SiN,.... |
For III-V materials,InP and GaAs wafers and chips precision polishing.
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Differents pad and cloth for polishing different materials and process.
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